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Critical Reviews in Solid State and Materials Sciences, Volume 27 Issue 1 2001

Increased IF from 4.154 to 6.300! (©2009 Thomson Reuters, Journal Citation Reports®)
Ranked 6/62 in Physics, Condensed Matter!
ISSN: 1547-6561 (electronic) 1040-8436 (paper)
Publication Frequency: 4 issues per year
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High-Power GaN Electronic Devices
A. P. Zhang;  F. Ren;  T. J. Anderson;  C. R. Abernathy;  R. K. Singh;  P. H. Holloway;  S. J. Pearton;  D. Palmer; G. E. McGuire
Pages 1 – 71
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