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Integrated Ferroelectrics
An International Journal
, Volume
93
Issue 1 2007
ISSN:
1607-8489 (electronic) 1058-4587 (paper)
Publication Frequency:
9 issues per year
Subjects:
Chemical Physics
;
Materials Science
;
Publisher:
Taylor & Francis
Issue Purchase: US$1001.98 -
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Editorials
GUEST EDITORIAL
Mario Maglione
Pages vii – ix
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Miscellany
ISIF 2007 COMMITTEES AND ORGANIZERS
Page xi
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ISIF 2007 SPONSORS
Page xiii
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ISIF 2007 EXHIBITORS
Page xv
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SESSION A: DEVICE PROGRESS INTEGRATION/RELIABILITY (FERRO-, PIEZO-, PYRO-ELECTRICS ETC.)
Page 1
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SESSION A: DEVICE PROGRESS INTEGRATION/RELIABILITY (FERRO-, PIEZO-, PYRO-ELECTRICS ETC.)
MATCHING NETWORKS IMPLEMENTED WITH HIGH-K CAPACITORS FOR HIGH FREQUENCY AMPLIFIERS
Nashid Afreen; T. S. Kalkur
Pages 3 – 9
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JITTER ANALYSIS AND PREDICTION FOR PHASE LOCKED LOOPS UTILIZING FERROELECTRIC CAPACITORS
Gregory Pauls; T. S. Kalkur
Pages 10 – 20
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THE PHYSICAL CORRELATION OF DOMAIN-WALL DEPINNING AND POLARIZATION RELAXATION IN Bi
3.53
La
0.47
Ti
3
O
12
THIN FILM
Y. X. Zhang; A. Q. Jiang; Y. J. Zhang; Y. Y. Lin; T. A. Tang
Pages 21 – 28
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PERFORMANCE MEASUREMENT OF A MULTI-LEVEL/ANALOG FERROELECTRIC MEMORY DEVICE DESIGN
Todd C. MacLeod; Thomas A. Phillips; Fat D. Ho
Pages 29 – 38
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FABRICATION AND CHARACTERIZATION OF EPOXY—Ba
0.5
Sr
0.5
TiO
3
EMBEDDED CAPACITORS
Yong-Jun Park; Jung-Hyuk Koh
Pages 39 – 45
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THE ELECTRICAL AND STRUCTURAL PROPERTIES OF Li
2
CO
3
DOPED 0.7(Ba,Sr)TiO
3
-0.3MgO CERAMICS
Hee-Wook You; Jung-Hyuk Koh
Pages 46 – 52
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EFFECT OF CALCINATION TEMPERATURE ON THE PIEZOELECTRIC CHARACTERISTICS OF Pb(Mn
1/3
Nb
2/3
)O
3
-Pb(Ni
1/3
Nb
2/3
)O
3
-Pb(Zr
0.50
Ti
0.50
)O
3
CERAMICS
Juhyun Yoo; Dohyung Kim; Hyunsun Song; Dong Soo Paik; Dong Heon Kang
Pages 53 – 61
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PIEZOELECTRIC AND DIELECTRIC PROPERTIES OF LOW TEMPERATURE SINTERING PMN-PZN-PZT CERAMICS ACCORDING TO THE AMOUNT OF PbO
Juhyun Yoo; Ilha Lee; Sangho Lee; Kookjin Kim; Hyunsang Yoon; Suho Lee
Pages 62 – 71
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Miscellany
SESSION B: ALTERNATIVE NON-VOLATILE MEMORY TECHNOLOGIES
Page 73
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SESSION B: ALTERNATIVE NON-VOLATILE MEMORY TECHNOLOGIES
EFFECTS OF BARRIER LAYERS ON THE ELECTRICAL BEHAVIORS OF PHASE-CHANGE MEMORY DEVICES USING Sb-RICH Ge-Sb-Te FILMS
Sung-Min Yoon; Kyu-Jeong Choi; Sang-Hee Ko Park; Seung-Yun Lee; Young-Sam Park; Byoung-Gon Yu
Pages 75 – 82
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TIME DEPENDENT RESISTANCE CHANGE OF AMORPHOUS PHASE IN PHASE-CHANGE NONVOLATILE MEMORIES
Sung-Min Yoon; Kyu-Jeong Choi; Nam-Yeal Lee; Seung-Yun Lee; Young-Sam Park; Byoung-Gon Yu; Tae-Jin Park; Se-Young Choi
Pages 83 – 89
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Investigation on Resistive Memory Switching Mechanism of NiO
D. C. Kim; S. Seo; D. -S. Suh; R. Jung; C. W. Lee; J. K. Shin; I. K. Yoo; I. G. Baek; H. J. Kim; E. K. Yim; C. W. Lee; S. O. Park; H. S. Kim; U-In Chung; J. T. Moon; B. I. Ryu; J. -S. Kim; B. H. Park
Pages 90 – 97
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Miscellany
SESSION C: HIGH FREQUENCY INTEGRATED MATERIALS AND DEVICES
Page 99
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SESSION C: HIGH FREQUENCY INTEGRATED MATERIALS AND DEVICES
FERROELECTRIC VARACTOR SHUNT SWITCHES FOR BROADBAND PHASE CONTROL APPLICATIONS
Guru Subramanyam; Krishna Pasala; Steven Schneider; Josh Radcliffe; Robert Neidhard; Keith Stamper; Mark Calcatera
Pages 101 – 109
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